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Figure 2 from Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model | Semantic Scholar
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Reflective SPDT GaN High Power PIN Diode Switch Operating from 500 MHz to 6 GHz Up
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GaN Switch #4
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Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
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Photograph (left) and schematic (right) of the RF GaN/RF-SOI SPST switch. | Download Scientific Diagram
Fairview Microwave Introduces New High-Power PIN Diode Switches Utilizing GaN Semiconductor Technology
GaN adoption solves power, performance issues in military applications - Military Embedded Systems
Reflective SPDT GaN High Power PIN Diode Switch Operating from DC to 12 GHz Up to 25 Watts (+44 dBm), 100ns and SMA
Cw GaN Broadband RF Switch Spdt - China GaN Switch | Made-in-China.com
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